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VISHAY
S506TY/S506TYR/S506TYRW
Vishay Semiconductors
MOSMIC(R) for TV-Tuner Prestage with 5 V Supply Voltage
SOT 143
Comments
MOSMIC - MOS Monolithic Integrated Circuit
2
1
Features
* Easy Gate 1 switch-off with PNP switching transistors inside PLL * Integrated gate protection diodes * Low noise figure, high gain * Typical forward transadmittance of 28 mS * Partly internal self biasing-network on chip * Superior cross modulation at gain reduction * High AGC-range with soft slope * Main AGC control range from 3 V to 0.5 V * Supply voltage 5 V (3 V to 7 V) * SMD package, standard and reverse pinning
3 1 4
SOT 143R
2
4 1 2
3
SOT 343R
4
3
16904
Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise gain controlled VHF and UHF input stages, such as in digital and analog TV tuners.
RFC VDD(VDS) G2 G1 S RG1
13650
Mechanical Data
Typ: S506TY Case: Plastic case (SOT 143) Weight: 8 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S506TYR Case: Plastic case (SOT 143R) Weight: 8 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S506TYRW Case: Plastic case (SOT 343R) Weight: 6 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
C block AGC C block RF in D
RF out C block
VGG (VRG1)
Document Number 85095 Rev. 1, 21-Oct-02
www.vishay.com 1
S506TY/S506TYR/S506TYRW
Vishay Semiconductors Parts Table
Part S506TY S506TYR S506TYRW Y06 Y6R WY6 Marking SOT143 SOT143R SOT343R Package
VISHAY
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM + VG1SM - VG1SM VG2SM Ptot TCh Tstg Value 8 30 10 6 1.5 6 200 150 - 55 to + 150 Unit V mA mA V V V mW C C
Maximum Thermal Resistance
Parameter Channel ambient
1)
Test condition
Symbol RthChA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Drain - source breakdown voltage Test condition ID = 10 A, VG1S = VG2S = 0 Symbol V(BR)DSS + V(BR)G1SS V(BR)G2SS + IG1SS IG2SS IDSO VG1S(OFF) VG2S(OFF) 8 0.3 0.3 1.0 12 Min 12 7 7 10 10 20 20 17 1.0 1.2 Typ. Max Unit V V V nA nA mA V V
Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 Gate 2 - source breakdown voltage IG2S = 10 mA, VG1S = VDS = 0 Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage + VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k VDS = 5 V, VG2S = 4, ID = 20 A VDS = VRG1 = 5 V, RG1 = 56 k, ID = 20 A
Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k, ID = IDSO, f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Test condition Symbol |y21s | Cissg1 Crss Coss Min 23 Typ. 28 2.5 20 0.9 Max 33 3.0 Unit mS pF fF pF
Document Number 85095 Rev. 1, 21-Oct-02
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VISHAY
Parameter Power gain
S506TY/S506TYR/S506TYRW
Vishay Semiconductors
Test condition GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz GS = 2 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz Symbol Gps Gps Gps Gps F F F Xmod Xmod 90 105 Min Typ. 32 28 22 50 4.5 1.0 1.5 6.0 1.6 2.3 Max Unit dB dB dB dB dB dB dB dBV dBV
AGC range Noise figure
VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz GS = GL = 20 mS, BS = BL = 0, f = 50 MHz GS = 2 mS, GL = 1 mS, BS = BSopt, f = 400 MHz GS = 3.3 mS, G L = 1 mS, BS = BSopt, f = 800 MHz
Cross modulation
Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz
Package Dimensions in mm
96 12240
96 12239
Document Number 85095 Rev. 1, 21-Oct-02
www.vishay.com 3
S506TY/S506TYR/S506TYRW
Vishay Semiconductors
VISHAY
96 12238
Document Number 85095 Rev. 1, 21-Oct-02
www.vishay.com 4
VISHAY
S506TY/S506TYR/S506TYRW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85095 Rev. 1, 21-Oct-02
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